Methods of Forming Capacitors

ABSTRACT

A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.

TECHNICAL FIELD

Embodiments disclosed herein pertain to methods of forming capacitors.

BACKGROUND

Capacitors are one type of component used in the fabrication ofintegrated circuits, for example in DRAM and other memory circuitry. Acapacitor is comprised of two conductive electrodes separated by anon-conducting dielectric region. As integrated circuitry density hasincreased, there is a continuing challenge to maintain sufficiently highstorage capacitance despite decreasing capacitor area. The increase indensity has typically resulted in greater reduction in the horizontaldimension of capacitors as compared to the vertical dimension. In manyinstances, the vertical dimension of capacitors has increased.

One manner of fabricating capacitors is to initially form an insulativematerial within which a capacitor storage electrode is formed. Forexample, an array of capacitor electrode openings for individualcapacitors may be fabricated in an insulative support material, with anexample material being silicon dioxide doped with one or both ofphosphorus and boron. Openings within which some or all of thecapacitors are formed are etched into the support material. It can bedifficult to etch such openings through the support material,particularly where the openings are deep.

Further and regardless, it is often desirable to etch away most if notall of the capacitor electrode support material after individualcapacitor electrodes have been formed within the openings. This enablesouter sidewall surfaces of the electrodes to provide increased area andthereby increased capacitance for the capacitors being formed. However,capacitor electrodes formed in deep openings are often correspondinglymuch taller than they are wide. This can lead to toppling of thecapacitor electrodes during etching to expose the outer sidewallssurfaces, during transport of the substrate, during deposition of thecapacitor dielectric layer, and/or outer capacitor electrode layer. U.S.Pat. No. 6,667,502 teaches the provision of a brace or retainingstructure intended to alleviate such toppling. Other aspects associatedin the formation of a plurality of capacitors, some of which includebracing structures, have also been disclosed, such as in:

U.S. Pat. No. 7,067,385; U.S. Pat. No. 7,125,781; U.S. Pat. No.7,199,005; U.S. Pat. No. 7,202,127; U.S. Pat. No. 7,387,939; U.S. Pat.No. 7,439,152; U.S. Pat. No. 7,517,753; U.S. Pat. No. 7,544,563; U.S.Pat. No. 7,557,013; U.S. Pat. No. 7,557,015; U.S. Patent Publication No.2008/0090416; U.S. Patent Publication No. 2008/0206950; U.S. Pat. No.7,320,911; U.S. Pat. No. 7,682,924; and U.S. Patent Publication No.2010/0009512.

Fabrication of capacitors in memory circuitry may include forming anarray of capacitors within a capacitor array area. Control or othercircuitry area is often displaced from the capacitor array area, and thesubstrate may include an intervening area between the capacitor arrayarea and the control or other circuitry area.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic, cross-sectional view of a portion of asemiconductor substrate at a preliminary processing stage of anembodiment in accordance with the invention.

FIG. 2 is a diagrammatic top view of a portion of the semiconductorsubstrate comprising the cross-section shown in FIG. 1 along the line1-1.

FIG. 3 is a view of the FIG. 1 substrate at a processing stagesubsequent to that of FIG. 1.

FIG. 4 is a view of the FIG. 3 substrate at a processing stagesubsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 4 substrate at a processing stagesubsequent to that of FIG. 4.

FIG. 6 is a diagrammatic top view of a portion of the semiconductorsubstrate comprising the cross-section shown in FIG. 5 along the line5-5.

FIG. 7 is a view of the FIG. 5 substrate at a processing stagesubsequent to that of FIG. 5.

FIG. 8 is a diagrammatic top view of a portion of the semiconductorsubstrate comprising the cross-section shown in FIG. 7 along the line7-7.

FIG. 9 is a view of the FIG. 7 substrate at a processing stagesubsequent to that of FIG. 7.

FIG. 10 is a diagrammatic top view of a portion of the semiconductorsubstrate comprising the cross-section shown in FIG. 9 along the line9-9.

FIG. 11 is a view of the FIG. 9 substrate at a processing stagesubsequent to that of FIG. 9.

FIG. 12 is a diagrammatic top view of a portion of the semiconductorsubstrate comprising the cross-section shown in FIG. 11 along the line11-11.

FIG. 13 is a view of the FIG. 11 substrate at a processing stagesubsequent to that of FIG. 11.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Example methods of forming capacitors in accordance with embodiments ofthe invention are described with reference to FIGS. 1-13. Referringinitially to FIGS. 1 and 2, a construction 10 is shown at a preliminaryprocessing stage of an embodiment. Construction 10 includes a substrate12 which may comprise semiconductive material. To aid in interpretationof the claims that follow, the term “semiconductor substrate” or“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

Construction 10 may comprise a capacitor array area 14 and a peripheralcircuitry area 16. An interface line 15 has been used in the figures asan example interface of capacitor array area 14 and peripheral circuitryarea 16. Logic circuitry may be fabricated within peripheral circuitryarea 16. Control and/or other peripheral circuitry for operating amemory array may or may not be fully or partially within array area 14,with an example memory array area 14 as a minimum encompassing all ofthe memory cells of a given memory array/sub-memory array. Further,multiple sub-arrays may also be fabricated and operated independently,in tandem, or otherwise relative one another. As used herein, a“sub-array” or “sub-memory array” may be considered as an array. Variouscircuit devices (not shown) may be associated with peripheral circuitryarea 16, as well as with capacitor array area 14, at the processingstage of FIGS. 1 and 2.

Electrically conductive node locations 18, 20, and 22 are shown withinmemory array area 14. Node locations 18, 20, and 22 may correspond to,for example, conductively-doped diffusion regions within asemiconductive material of substrate 12, and/or to conductive pedestalsassociated with substrate 12. Although the node locations are shown tobe electrically conductive at the processing stage of FIG. 1, theelectrically conductive materials of the node locations could beprovided at a processing stage subsequent to that of FIG. 1. The nodelocations may ultimately be electrically connected with transistor orother constructions (not shown), may correspond to source/drain regionsof transistor constructions, or may be ohmically connected tosource/drain regions of transistor constructions. As alternate examples,the node locations may correspond to, connect to, or be parts ofconductive interconnect lines. Regardless, as used herein, “nodelocations” refers to the elevationally outermost surfaces to which firstcapacitor electrodes electrically connect, for example as describedbelow.

Dielectric material 24 may be over peripheral circuitry area 16. Suchmay be homogenous or non-homogenous, with doped silicon dioxide such asphosphosilicate glass (PSG) and borophosphosilicate glass (BPSG) beingexamples. Dielectric material 24 may be formed by blanket depositionover substrate 12, and then removed by subtractive patterning from arraycircuitry area 14. An example thickness range for dielectric material 24is about 0.5 micron to about 3 microns.

A support material 28 has been formed elevationally over substrate 12within capacitor array area 14. In one embodiment, support material 28may be directly against node locations 18, 20, and 22. In this document,a material or structure is “directly against” another when there is atleast some physical touching contact of the stated materials orstructures relative one another. In contrast, “over”, “on”, and“against” not proceeded by “directly”, encompass “directly against” aswell as constructions where intervening material(s) or structure(s)result(s) in no physical touching contact of the stated materials orstructures relative one another. Support material 28 may be homogenousor non-homogenous, and may be any one or more of dielectric, conductive,or semiconductive. For example, support material 28 may be a singlehomogenous layer of a dielectric, conductive or semiconductive material;multiple layers of a single homogenous dielectric, conductive, orsemiconductive material; or multiple layers of differing compositions ofdielectric, conductive, and or semiconductive materials. An examplethickness for support material 28 is about 0.25 micron to about 3microns.

FIGS. 1 and 2 show support material 28 as comprising covering material30, an elevationally outer material 50, an elevationally inner material52, an elevationally intermediate material 54 between materials 50 and52, and dielectric material 26. Each may be homogenous ornon-homogenous. Covering material 30 and intermediate material 54 are ofdifferent composition from composition of outer material 50 and innermaterial 52. Covering material 30 and intermediate material 54 may be ofthe same or different composition relative each other, and regardlessare ideally dielectric when remaining as part of the finished circuitryconstruction. Example materials include one or both of silicon nitrideand silicon dioxide. An example thickness for covering material 30 isabout 600 Angstroms to about 1,500 Angstroms, with that for intermediatematerial 54 being about 50 Angstroms to about 600 Angstroms.Elevationally outer material 50 and elevationally inner material 52 maybe of the same or different composition relative each other. Examplematerials include one or more of doped or undoped silicon, carbon,polyimide, and oxide, with an ideal example being polysilicon. Anexample thickness for outer material 50 is about 500 Angstroms to about1,000 Angstroms, with that for inner material 54 being about 1,000Angstroms to about 8,000 Angstroms. Examples for dielectric material 26are one or both of silicon nitride and undoped silicon dioxide. Anexample thickness range for dielectric material 26 is about 50 Angstromsto about 300 Angstroms. Regardless, multiple intermediate materials 54(e.g., that are elevationally spaced from one another) may be used (notshown).

Referring to FIG. 3, individual capacitor openings 32 have been formedthrough covering material 30, outer material 50, intermediate material54, elevationally inner material 52, and dielectric material 26 to nodelocations 18, 20, and 22. An example technique for forming openings 32includes photolithographic patterning and anisotropic etch. Multipleetching chemistries may be used for etching material(s) 28 as selectedby the artisan. An example for anisotropically etching silicon nitrideincludes plasma etching using an inductively coupled plasma reactor withabout 700W to 900W top power, about 250V to 450V chuck bias, chamberpressure about 6 mTorr to 20 mTorr, substrate temperature about 25° C.to 45° C., CH₂F₂ flow about 15 sccm to 35 sccm, and CF₄ flow about 75sccm to 125 sccm. An example for anisotropically etching doped orundoped polysilicon includes NF₃:O₂:HBr at a volumetric ratio of 1:1:3to5. Alternate examples for anisotropically etching polysilicon includesubstituting SF₆ or Cl₂ for the NF₃, and in such events providing analternate volumetric ratio of 1:1:1.

Referring to FIG. 4, a first capacitor electrode 34 has been formedwithin individual openings 32 in support material 28 in conductiveelectrical connection with respective node locations 18, 20, and 22.First capacitor electrodes 34 may be homogenous or non-homogenous, andmay be of any suitable shape(s) with a solid pillar-like shape beingshown. As an alternate example, the first capacitor electrodes may be inthe shape of upwardly open containers. First capacitor electrodes 34 maybe formed by depositing one or more conductive materials to overfillopenings 32, followed by planarizing the conductive material back atleast to the outermost surface of covering material 30. Exampleconductive materials are one or combinations of titanium, titaniumnitride, and ruthenium. First capacitor electrodes may be considered ascomprising sidewalls 35.

Referring to FIGS. 5 and 6, openings 38 have been formed throughcovering material 30, for example by anisotropic etching, to exposesupport material 28. In one embodiment, a mask (not shown) over coveringmaterial 30 and first capacitor electrodes 34 may be used as an etchmask during such anisotropic etching, with such a mask having openingsthe shape of openings 38. That mask may be everywhere spacedelevationally from covering material 30 and capacitor electrodes 34, ormay comprise one or more materials (i.e., photosensitive, hard-mask,and/or antireflective materials) deposited over covering material 30 andcapacitor electrodes 34. Regardless, an example mask thickness is about1,000 Angstroms to about 10,000 Angstroms.

Referring to FIGS. 7 and 8, outer material 50 (not shown) has been dryisotropically etched from being over capacitor electrode 34, and in oneembodiment as shown from being over intermediate material 54. Theetching of outer material 50 is conducted selectively relative tocapacitor electrode 34, and in one embodiment selectively relative tointermediate material 54, in one embodiment selectively relative tocovering material 30. In the context of this document, a selective etchrequires removal of one material relative to a stated another materialat a removal rate of at least 2:1. In one embodiment, the dry isotropicetching of material 50 uses plasma. In one embodiment, no wet etching isused in removing any of outer material 50. In one embodiment and asshown, all of outer material 50 is removed. In one embodiment, a maskused in forming openings 38 through covering material 30 remains overthe substrate during etching of outer material 50 (not shown).

In one embodiment where outer material 50 comprises polysilicon andcapacitor electrodes 34 comprise TiN, the dry isotropic etching of outermaterial 50 comprises plasma etching using a sulphur andfluorine-comprising chemistry. The sulfur and fluorine-comprisingchemistry may be derived from a single compound (e.g., SF₆) and/or frommultiple compounds (e.g. COS, SO₂, H₂S, NF₃, and F₂). In one embodiment,the etching is conducted at a pressure of at least about 150 mTorr andin one embodiment at a pressure of at least about 200 mTorr. In oneembodiment, the etching is conducted at a substrate temperature of nogreater than about 30° C., in one embodiment at no greater than 10° C.,and in one embodiment at no greater than 0° C. Ideal results may beachieved at higher pressure and lower temperature (i.e., at least 200mTorr and no greater than 10° C.). In one embodiment, the etchingchemistry is derived from gas comprising SF₆, and with or without one ormore inert gases.

An example first set of etching conditions in an inductively coupledplasma reactor for etching polysilicon-comprising support materialselectively relative to TiN-comprising first capacitor electrodesincludes about 700W to 900W top power, 0V to about 20V chuck bias,chamber pressure about 150 mTorr to 250 mTorr, substrate temperatureabout −10° C. to 40° C., SF₆ flow about 200 sccm to 400 sccm, NF₃ flowabout 40 sccm to 60 sccm, and He and/or Ar flow 0 sccm to about 350sccm. An example second set of etching conditions for etchingpolysilicon-comprising support material selectively relative toTiN-comprising first capacitor electrodes includes about 1,000W to2,000W top power, 0V to about 20V chuck bias, chamber pressure about 150mTorr to 250 mTorr, substrate temperature about −10° C. to 30° C., SF₆flow about 50 sccm to 900 sccm, and He and/or Ar flow about 300 sccm to1500 sccm. Use of SF6 solely as the contributor to reactive speciesformation may provide better etch selectivity relative to TiN and Si₃N₄in comparison to combining SF₆ and NF₃, but more etch residue.

In one embodiment, the etching of polysilicon-comprising supportmaterial selectively relative to TiN-comprising first capacitorelectrodes includes a plurality of sulphur and fluorine-comprisingetching steps individually separated by a hydrogen treating step. In oneembodiment, the hydrogen treating steps are conducted at lower pressurethan are the sulphur and fluorine-comprising etching steps. In oneembodiment, the hydrogen treating steps are individually longer than areindividual of the sulphur and fluorine-comprising etching steps. In oneembodiment, the hydrogen treating and the etching steps are eachconducted using plasma. In one embodiment, a hydrogen-containing plasmais used in the hydrogen treating step and is derived from gas consistingessentially of H₂. An example set of hydrogen treating conditions in aninductively coupled plasma reactor includes about 800W to 5,000W toppower, 0V to about 20V chuck bias, chamber pressure about 40 mTorr to250 mTorr, substrate temperature about −10° C. to 30° C., H₂ flow about200 sccm to 1,200 sccm, and He and/or Ar flow 0 sccm to about 1500 sccm.An example time period for individual etching steps is about 2 secondsto 6 seconds, and that for individual hydrogen treating steps about 8seconds to 10 seconds. Hydrogen treating may be conducted to removeresidue, if any, that might result from the act of etching with asulphur and fluorine-comprising etching chemistry.

In one embodiment and as shown, TiF 45 is formed on first capacitorelectrode sidewalls 35 from Ti of the TiN of first capacitor electrodes34 and from fluorine of the sulfur and fluorine-comprising etchingchemistry. In one embodiment, TiF is formed to a thickness that isself-limited in spite of further exposure of capacitor electrodes 34 tothe sulphur and fluorine-comprising etching chemistry. Such an exampleself-limited thickness is about 10 Angstroms. Regardless, TiF iselectrically conductive but not as much as TiN.

In one embodiment of a method of forming capacitors,polysilicon-comprising support material is dry isotropically etchedselectively relative to TiN-comprising first capacitor electrodes usinga sulphur and fluorine-comprising etching chemistry regardless ofpresence of covering material 30, intermediate material 54, and/ordielectric material 26. Any other attribute as described above may beused. In one embodiment of a method of forming capacitors,polysilicon-comprising support material is dry isotropically etchedusing a fluorine-comprising etching chemistry that combines Ti of theTiN of the capacitor electrodes with fluorine of the etching chemistryto form TiF on sidewalls of the first capacitor electrodes. In oneembodiment, the etching chemistry comprises S. In one embodiment, theetching is conducted selectively relative to the TiN-comprising firstcapacitor electrodes. Any other attribute as described above may beused.

Referring to FIGS. 9 and 10, openings 38 have been anisotropicallyetched through intermediate material 54 to expose inner material 52using covering material 30 having openings 38 therein as an etch mask.The etching of openings 38 through intermediate material 54 is conductedselectively relative to first capacitor electrodes 34, and in oneembodiment selectively relative to covering material 30. In oneembodiment, such etching is conducted using plasma. Where, for example,intermediate material 54 comprises silicon nitride, the same exampleetching conditions described above for etching openings 38 throughcovering material 30 may be used. In one embodiment, a mask used informing openings 38 through covering material 30 remains over thesubstrate during anisotropic etching of intermediate material 54. Suchmay enable ions in a plasma etching to achieve better directionality.For example, areas bombarded by etching ions may achieve better removalrate than shadowed/off-axis areas in comparison to plasma etchingconducted where the mask does not remain over the substrate during theetching.

Referring to FIGS. 11 and 12, inner material 52 (not shown) has beenetched through openings 38 in intermediate material 54. The etching ofinner material 52 has been conducted selectively relative to firstcapacitor electrodes 34, in one embodiment selective relative tocovering material 30, in one embodiment selective relative tointermediate material 54, and in one embodiment selectively relative todielectric material 26. In one embodiment, such etching has beenconducted isotropically, and in one embodiment comprises dry plasmaetching. In one embodiment, most if not all of inner material 52 isremoved, with all of such shown as having been removed in FIGS. 11 and12. Where dry isotropic etching conditions are used, suchconditions/chemistry may be the same or different from that used in thedry isotropic etching of outer material 50. In one embodiment during theetching of inner material 52, TiF 45 may be formed on first capacitorelectrode sidewalls 35 from Ti of the TiN and from fluorine of thesulphur and fluorine-comprising etching chemistry.

Referring to FIG. 13, a capacitor dielectric 44 is provided oversidewalls 35 of first capacitor electrodes 34. Such may be homogenous ornon-homogenous. A second capacitor electrode 46 is formed over capacitordielectric 44, thereby forming individual capacitors 48. Secondcapacitor electrode 46 may be homogenous or non-homogenous, and may beof the same composition or of different composition from that of firstcapacitor electrodes 34. Second capacitor electrode 46 is shown as beinga single capacitor electrode common to the individual capacitors,although separate or other multiple second capacitor electrodes may beused. Likewise, capacitor dielectric 44 may be continuously ordiscontinuously received over multiple first capacitor electrodes 34.

Appropriate circuitry (not shown) would be associated with capacitorelectrodes 46 and 34 of capacitors 48 to enable selective operation ofindividual capacitors 48. This other circuitry is not material toembodiments of this invention, and may be existing or later-developedcircuitry within the skill of the artisan.

Conclusion

In some embodiments, a method of forming capacitors comprises providingfirst capacitor electrodes within support material. The first capacitorelectrodes comprise TiN and the support material comprises polysilicon.The polysilicon-comprising support material is dry isotropically etchedselectively relative to the TiN-comprising first capacitor electrodesusing a sulfur and fluorine-containing etching chemistry. A capacitordielectric is formed over sidewalls of the first capacitor electrodesand a second capacitor electrode is formed over the capacitordielectric.

In some embodiments, a method of forming capacitors comprises providingfirst capacitor electrodes within support material. The first capacitorelectrodes comprise TiN and the support material comprises polysilicon.The polysilicon-comprising support material is dry isotropically etchedusing a fluorine-comprising etching chemistry that combines with Ti ofthe TiN to form TiF on sidewalls of the first capacitor electrodes. Acapacitor dielectric is formed over the TiF of the first capacitorelectrodes and a second capacitor electrode is formed over the capacitordielectric.

In some embodiments, a method of forming capacitors comprises providingfirst capacitor electrodes within support material. The support materialcomprises an elevationally outer material, an elevationally innermaterial, an elevationally intermediate material between the outer andinner materials, and a covering material over the outer material. Thecovering material and the intermediate material are of differentcomposition from composition of the outer and inner materials. Openingsare formed through the covering material to expose the outer material.The outer material is dry isotropically etched from being over the firstcapacitor electrodes and the intermediate material. The etching of theouter material is conducted selectively relative to the first capacitorelectrodes and the intermediate material. Openings are anisotropicallyetched through the intermediate material to expose the inner materialusing the covering material with openings therein as an etch mask. Theetching of openings through the intermediate material is conductedselectively relative to the first capacitor electrodes. The innermaterial is etched through the openings in the intermediate material.The etching of the inner material is conducted selectively relative tothe first capacitor electrodes. A capacitor dielectric is formed oversidewalls of the first capacitor electrodes and a second capacitorelectrode is formed over the capacitor dielectric.

In some embodiments, a method of forming capacitors comprises providingfirst capacitor electrodes comprising TiN within support material. Thesupport material comprises an elevationally outer material comprisingpolysilicon, an elevationally inner material comprising poly silicon, anelevationally intermediate material between the outer and innermaterials, and a covering material over the outer material. The coveringmaterial and the intermediate material are of different composition fromcomposition of the outer and inner materials. Openings areanisotropically etched through the covering material to expose the outermaterial. The polysilicon-comprising outer material is dry isotropicallyplasma etched from being over the first capacitor electrodes and theintermediate material. The etching of the outer material is conductedselectively relative to the covering material, the first capacitorelectrodes, and the intermediate material. The etching of thepolysilicon-comprising outer material is conducted with a sulfur andfluorine-comprising etching chemistry, at a pressure of at least about150 mTorr, and at a substrate temperature of no greater than about 10°C. The etching of the polysilicon-comprising outer material includes aplurality of sulfur and fluorine-comprising plasma etching stepsindividually separated by a hydrogen-plasma treating step. Openings areanisotropically plasma etched through the intermediate material toexpose the inner material using the covering material with openingstherein as an etch mask. The etching of openings through theintermediate material is conducted selectively relative to the firstcapacitor electrodes and the covering material. Thepolysilicon-comprising inner material is dry isotropically plasma etchedthrough the openings in the intermediate material. The etching of thepolysilicon-comprising inner material is conducted selectively relativeto the covering material, the first capacitor electrodes, and theintermediate material, and removes at least most of the inner material.The etching of the polysilicon-comprising inner material is conductedwith a sulfur and fluorine-comprising etching chemistry, at a pressureof at least about 150 mTorr, and at a substrate temperature of nogreater than about 10° C. The etching of the polysilicon-comprisinginner material includes a plurality of sulfur and fluorine-comprisingplasma etching steps individually separated by a hydrogen-plasmatreating step. A capacitor dielectric is formed over sidewalls of thefirst capacitor electrodes and a second capacitor electrode is formedover the capacitor dielectric.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of forming capacitors, comprising: providing first capacitorelectrodes within support material, the first capacitor electrodescomprising TiN, the support material comprising polysilicon; dryisotropically etching the polysilicon-comprising support materialselectively relative to the TiN-comprising first capacitor electrodesusing a sulfur and fluorine-comprising etching chemistry; and forming acapacitor dielectric over sidewalls of the first capacitor electrodesand forming a second capacitor electrode over the capacitor dielectric.2. The method of claim 1 wherein the etching comprises plasma etching,with the sulfur and fluorine-comprising etching chemistry being derivedfrom SF₆.
 3. The method of claim 1 wherein the etching is conducted at apressure of at least about 150 mTorr.
 4. The method of claim 1 whereinthe etching is conducted at a substrate temperature of no greater thanabout 30° C.
 5. The method of claim 4 wherein the etching is conductedat a substrate temperature of no greater than about 10° C.
 6. The methodof claim 5 wherein the etching is conducted at a substrate temperatureof no greater than 0° C.
 7. The method of claim 1 wherein the etching isconducted at a pressure of at least about 200 mTorr and at a substratetemperature of no greater than about 10° C.
 8. The method of claim 1wherein the etching includes a plurality of sulfur andfluorine-comprising etching steps individually separated by a hydrogentreating step.
 9. The method of claim 8 wherein the hydrogen treatingsteps are conducted at lower pressure than are the sulfur andfluorine-comprising etching steps.
 10. The method of claim 8 wherein thehydrogen treating steps are individually longer than are individual ofthe sulfur and fluorine-comprising etching steps.
 11. The method ofclaim 8 wherein the etching comprises plasma etching and the hydrogentreating is with a hydrogen-containing plasma.
 12. The method of claim11 wherein the hydrogen-containing plasma is derived from gas consistingessentially of H₂.
 13. The method of claim 1 comprising forming TiF onthe first capacitor electrode sidewalls from Ti of the TiN and fromfluorine of the sulfur and fluorine-comprising etching chemistry. 14.The method of claim 1 wherein the etching comprises plasma etching, theetching is conducted at a pressure of at least about 200 mTorr and at asubstrate temperature of no greater than about 10° C., the etchingchemistry is derived from gas comprising SF₆.
 15. The method of claim 1being void of any wet etching of the polysilicon-comprising supportmaterial.
 16. A method of forming capacitors, comprising: providingfirst capacitor electrodes within support material, the first capacitorelectrodes comprising TiN, the support material comprising polysilicon;dry isotropically etching the polysilicon-comprising support materialusing a fluorine-comprising etching chemistry that combines Ti of theTiN with fluorine of the etching chemistry to form TiF on sidewalls ofthe first capacitor electrodes; and forming a capacitor dielectric overthe TiF of the first capacitor electrodes and forming a second capacitorelectrode over the capacitor dielectric.
 17. The method of claim 16wherein the etching chemistry comprises S.
 18. The method of claim 16wherein the etching is conducted selectively relative to theTiN-comprising first capacitor electrodes.
 19. The method of claim 16wherein the TiF is formed to a thickness that is self-limited in spiteof further exposure of the first capacitor electrodes to thefluorine-comprising etching chemistry.
 20. The method of claim 16wherein the etching comprises plasma etching, the etching is conductedat a pressure of at least about 200 mTorr and at a substrate temperatureof no greater than about 10° C., the etching chemistry is derived fromgas comprising SF₆. 21-34. (canceled)
 35. The method of claim 1 whereinthe etching comprises plasma etching.
 36. The method of claim 1 whereinthe etching is conducted at a pressure of at least about 200 mTorr andat a substrate temperature of no greater than about 30° C.
 37. Themethod of claim 1 comprising forming TiF on the first capacitorelectrode sidewalls.
 38. The method of claim 16 wherein the etchingcomprises plasma etching, the etching is conducted at a pressure of atleast about 200 mTorr and at a substrate temperature of no greater thanabout 30° C., the etching chemistry is derived from gas comprising SF₆.